QESST University Partner, UNSW Australia, sets world record in solar energy efficiency

This article first appeared on UNSW Australia News – December 8, 2014   UNSW’s solar researchers have converted over 40% of the sunlight hitting a solar system into electricity, the highest efficiency ever reported. The world-beating efficiency was achieved in outdoor tests in Sydney, before being independently confirmed by the National Renewable Energy Laboratory (NREL) […]

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QESST Scholar Awarded Graduate Education Completion Fellowship

Jen Fuller, a QESST ERC and CSPO (Consortium for Science, Policy and Outcomes) scholar has been awarded a Graduate Education Completion Fellowship for Spring 2015 in the School of Human Evolution and Social Change (SHESC) at Arizona State University (ASU). Completion Fellowships are awarded to support a student’s degree completion of a PhD, and are […]

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QESST Industry Member, Soitec Phoenix Labs, helps break electricity world record

This article first appeared on AZ Central – January 14, 2015 Ryan Randazzo |, The Republicazcentral.com In a research facility off the Loop 101 in Tempe, about 30 researchers in clean rooms wearing protective suits, gloves and hair nets test some of the most efficient semiconductor materials on the planet for solar panels and LEDs. […]

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Quantum-Engineering for Pushing Tandem Solar Cells Conversion Efficiencies toward 50%

Tandem devices based on III-V semiconductors have shown excellent promise for boosting solar cell conversion efficiencies. In particular, the use of a bottom subcell made with dilute nitrogen alloys of these semiconductors in a 3-cells series-connected tandem configuration already has shown practical conversion efficiencies in the range of 44%. Nevertheless, thus far access to higher […]

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QESST researchers grow novel InGaN alloys

A collaboration between QESST researchers at Georgia Tech and Arizona State University has developed and demonstrated high quality InGaN thin films with high In compositions. These films show high optical properties that result from full-strain relaxation and uniform chemical composition profiles, in a range that was previously thought not possible. Thick InGaN films grown on […]

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